WALTHAM, MA, June 9, 2026 – Finwave Semiconductor is presenting eight new GaN-on-Si RF switch products at IMS2026 in Boston, expanding its portfolio for high-power, broadband, and compact RF systems used in communications, aerospace, defense, test equipment, and medical technologies.
The switches use Finwave’s GaN-on-Si process technology for RF systems that require high power handling, broad frequency coverage, and compact packaging. The portfolio supports communications infrastructure, Wi-Fi systems, satellite communications, radar, drones and counter-drone systems, test and measurement equipment, and medical technologies.
New Product Highlights
Finwave’s new RF switch additions expand power handling and frequency operation in compact 4×4 mm QFN packaging. The package format addresses SWaP-C (Size, Weight, Power and Cost) requirements for aerospace and defense systems.
The devices use Finwave’s GaN-on-Si process technology and integrate driver functionality for system integration. Finwave said the switches can replace legacy RF switch components in systems that require smaller form factors, lower weight, higher power handling, and lower system cost.
The new product family includes:
- FW2106, FW2107 and FW2108: SPDT switches with Continuous Wave (CW) and pulse power handling, plus expanded frequency coverage for broadband RF applications.
- FW2109: An ultra-broadband SPDT switch operating from 300 MHz to 18 GHz with 6W CW and 12W pulse power handling for electronic warfare and wideband communications systems.
- FW2124: An RF switch for X-band radar and satellite communications applications, delivering 8W CW and 16W pulse power handling for high-frequency environments.
- FW2118 and FW2110: Low-loss switches for applications where insertion loss must be minimized, supporting up to 12W and 40W CW power handling, respectively, and pulse power handling up to 80W.
- FW2198: An SP4T switch supporting 20W CW and 40W pulse power handling at frequencies up to 10 GHz.
RF Switch Demos Showcase Speed, Isolation & Bandwidth
- High-isolation switch designs developed in collaboration with X-Microwave
- High-frequency switch operation up to 18 GHz
- High-speed switching performance in the 30 ns range
Partnership with X-Microwave
Finwave has partnered with X-Microwave to support RF prototyping and RF module integration. Finwave switch products are available as X-MWblocks, including the FW2001, FW2002 and FW2003, supporting power handling up to 30W and frequencies up to 12 GHz.
“Finwave continues to expand the capabilities of GaN-on-Silicon technology with RF switch solutions designed to meet the increasing performance demands of next-generation communications, aerospace and defense systems,” said Finwave Semiconductor CEO Pierre-Yves Lesaicherre. “Our latest products combine high power handling, high frequency, fast switching, broadband operation and compact integration, while partnerships with companies like X-Microwave help customers move more quickly from evaluation and prototyping to real-world system deployment.”
Availability
The new Finwave switches are available from Finwave. Existing switches, including the FW2001, FW2002 and FW2003, are also available as X-MWblocks from X-Microwave and from RFMW.
Source: Finwave Semiconductor
About Finwave Semiconductor
Finwave Semiconductor is a U.S. fabless semiconductor company based in Waltham, MA. The company develops Gallium Nitride on Silicon (GaN-on-Si) technology and radio frequency components. Its products include RF power amplifiers, RF switches, GaN FinFET devices and enhancement-mode GaN products. Finwave serves aerospace and defense, mobile infrastructure, smartphone, medical device, cloud computing, satellite communications, automotive, and test and measurement markets. Founded in 2012 as Cambridge Electronics, the company rebranded as Finwave in 2022. Finwave works with semiconductor foundries and distribution partners to bring GaN-on-Si devices to market.