TORRANCE, CA, Sep 30, 2026 – Navitas Semiconductor will develop 10 kV silicon carbide (SiC) insulated-gate bipolar transistors (IGBTs) and associated PiN diodes under a U.S. Army prototype program, known as ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT). The project aims to establish and validate a manufacturing process through repeated design, fabrication and testing. The Army Research Laboratory, part of the U.S. Army Combat Capabilities Development Command (DEVCOM), sponsors the project.
The Joint Experimentation and Technology Accelerator (JETX) supports the program, which covers power semiconductor devices rated at 10 kV and above. Applications include high-power electronics for military systems and critical infrastructure.
Navitas plans to build the IGBTs using trench-assisted planar (TAP) architecture and integrate them with PiN diode technology. TAP currently underpins MOSFETs in the company’s GeneSiC portfolio, which spans voltage ratings from 650 V to 6.5 kV. According to Navitas, the portfolio uses a U.S.-anchored supply chain for engineering, manufacturing and support.
The company cites these earlier SiC developments:
- 5 kV SiC thyristors in 2010, recognized with a 2010 R&D 100 Award.
- 10–15 kV PiN diodes in 2012.
- Commercial release of 6.5 kV SiC MOSFETs in 2021.
“The ALATTIS award marks a significant milestone in advancing ultra-high-voltage silicon carbide (SiC) power devices and recognizes Navitas’ over 20 years of innovation in delivering reliable, ultra-high-voltage, high-power SiC technologies,” said Siddarth Sundaresan, SVP and chief technology officer at Navitas. “This program enables Navitas to extend its leadership beyond SiC MOSFETs by developing next-generation 10 kV SiC IGBTs built on our unique, patented trench-assisted planar (TAP) architecture and integrated with advanced PiN diode technologies.”
Source: Navitas
About Navitas
Navitas Semiconductor, founded in 2014 and headquartered in Torrance, CA, designs and manufactures power semiconductors based on gallium nitride (GaN) and silicon carbide (SiC) technologies. Operating under the GaNFast and GeneSiC brands, the company develops integrated GaN power ICs and SiC devices for use in applications such as AI data centers, electric vehicles, renewable energy, energy storage, industrial systems, and consumer electronics. The company employs approximately 280 people. GaNFast ICs combine power switching with control, sensing, and protection features, while GeneSiC devices target high-voltage and high-reliability applications. Navitas holds over 300 issued or pending patents and offers a 20-year warranty on its GaNFast products. It is also recognized as the first semiconductor company to achieve CarbonNeutral certification.
