TOKYO, Japan, July 7, 2025 – Renesas Electronics has released three 650V GaN FETs designed for AI data centers, 800V HVDC server power supplies, EV charging stations, UPS systems, battery energy storage, and solar inverters. The Gen IV Plus devices combine GaN technology with silicon-compatible gate drive inputs, reducing switching power losses, supporting silicon FET workflows. Available in TOLT, TO-247, and TOLL packages, the devices help engineers optimize thermal management and board layouts in power architectures.
The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the SuperGaN platform, a field-proven depletion mode (d-mode) pioneered by Transphorm and acquired by Renesas in June 2024. Built on low-loss d-mode technology, these devices deliver higher efficiency compared to silicon, silicon carbide (SiC), and GaN solutions. They reduce power losses through lower gate charge, output capacitance, crossover loss, and dynamic resistance effects. A key feature is their higher 4V threshold voltage, which current enhancement-mode (e-mode) GaN devices do not support.
Built on a die that is 14% smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14% and delivering a 20% improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size helps reduce output capacitance and overall system costs, which in turn improves efficiency and power density. This makes the Gen IV Plus devices suitable for applications where space and thermal performance are key design restraints. Since they are compatible with existing designs, they can be integrated without changes, allowing teams to reuse their current design work and minimize redevelopment effort.
Available in compact TOLT, TO-247 and TOLL packages, they provide the packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.
“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, vice president of the GaN business division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”
Unique d-mode Normally-off Design for Reliability and Easy Integration
The Renesas devices use a low-voltage silicon MOSFET – a configuration that achieves normally-off operation while capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.
GaN-based switching devices are used in power semiconductor applications such as electric vehicles, inverters, AI data center servers, renewable energy systems, and industrial power conversion. Compared to silicon carbide (SiC) and silicon-based devices, GaN switches operate at higher switching frequencies and permit compact designs.
Availability
The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS are available as of date, along with the 4.2kW Totem-pole PFC GaN Evaluation Platform (RTDTTP4200W066A-KIT).
Click here for more information about Renesas’ GaN solutions.
Source: Renesas Electronics
About Renesas Electronics
Renesas Electronics Corporation, headquartered in Tokyo, Japan, is a semiconductor manufacturer focused on the research, design, development, production, and sale of semiconductor components. Its product portfolio includes microcontrollers, analog and power devices, and system-on-chip (SoC) solutions, which are used across automotive, industrial, infrastructure, and IoT applications. As of December 31, 2024, the company employed approximately 21,204 people globally. For the fiscal year ending December 31, 2024, Renesas reported revenue of ¥1,348.5 billion and an operating profit of ¥223.0 billion.