TOKYO, Japan, Oct 9, 2026 – Renesas Electronics has introduced its first family of 100 V enhancement-mode (E-mode) GaN power transistors for low-voltage power conversion. The devices use silicon-compatible footprints, which allow migration from existing MOSFET layouts without PCB rework.
The family comprises the RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC GaN FETs. Applications include AI data centers, humanoid robotics, factory automation, industrial motor drives, power tools and solar microinverters.
The normally off transistors offer on-resistance, RDS (on), ranging from 5 mΩ-1.2 mΩ across multiple MOSFET-compatible packages. They support synchronous rectification, multiphase buck conversion and motor-drive applications.
The transistors combine low total gate charge (Qg) and output charge (Qoss). These characteristics reduce switching energy losses in AI power supply units, motor drives and DC-DC power stages. The devices also have zero reverse recovery charge (Qrr = 0), eliminating reverse recovery losses.
“Customers adopting next-generation GaN technology for AI servers, robotics, industrial motor drives and renewable energy systems are looking for ways to deliver more efficient power conversion performance from increasingly compact systems,” said Akhil Nair, senior director, low-voltage GaN at Renesas. “Our low-voltage GaN family delivers the efficiency, switching performance and power density designers expect from GaN while making it significantly easier to transition from existing silicon MOSFET designs.”
Renesas identifies power-conversion stages within 800 V high-voltage direct current (HVDC) architectures as another application for low-voltage GaN. The technology can reduce passive component size, switching losses and cooling requirements.
Renesas describes the following design benefits:
- 1 to 3% higher efficiency over silicon-based designs, eliminating Qrr loss
- 40 to 70% reduction in switching losses
- Lower switching energy per cycle to support greater power density.
- Higher-frequency operation that reduces the size of magnetic components and the overall system footprint
- Reduced fan and active cooling requirements, lowering system complexity and bill-of-materials costs.
The low-voltage GaN power transistors and evaluation boards are available now.
Source: Renesas Electronics
About Renesas Electronics
Renesas Electronics is a semiconductor manufacturer that develops and supplies microcontrollers, analog devices, power semiconductors, system-on-chip products, and connectivity components used in embedded systems. The company provides semiconductor devices and related software for automotive systems, industrial equipment, infrastructure, consumer electronics, and IoT applications. Renesas serves automotive suppliers, electronics manufacturers, device makers, and industrial system developers worldwide. The company designs, manufactures, and markets semiconductor components used in control systems, sensing, power management, and communications. Renesas Electronics was formed in 2010 through the merger of Renesas Technology and NEC Electronics, building on semiconductor businesses of Hitachi and Mitsubishi Electric. The company is headquartered in Tokyo, Japan. Renesas operates design centers, manufacturing facilities, and sales offices across Asia, Europe, and the Americas. Renesas Electronics employs about 23,000 people worldwide.
