TOKYO, Japan, Oct 2, 2026 – Renesas Electronics is sampling a 650V GaN device that dissipates heat through both sides of its package. The TP65H020G4PLSGBD provides 20-milliohm (mΩ) on-resistance in an 8-by-8-millimeter PQFN package for power conversion in 800V AI data center architectures.
The device uses Renesas’ Gen IV Plus GaN architecture, with operation up to 700V. Applications include DC/DC intermediate bus converters that step 800 volts down to 48V, 12V or 6V. It also supports battery backup (BBU) and capacitor bank (CBU) stages in sidecar power racks.
The package addresses space and thermal constraints as rack power rises from about 120 kW toward megawatt levels. Renesas reports 10% lower top-side thermal impedance than top-side-cooled packages. The PQFN footprint is 57% smaller than the existing 10-by-15-millimeter TOLT package.
The device has low gate charge and output capacitance, a built-in freewheeling diode with minimal reverse recovery, and a high threshold voltage. It operates without negative gate bias and accepts a silicon gate driver, without requiring any enhancement-mode driver. According to Renesas, switching in the megahertz range can reduce passive-component sizes and bill-of-materials costs.
“Customers building megawatt-scale AI data centers are running out of board space and thermal headroom before they hit their power limits,” said John Wiggenhorn, senior product line director of high-voltage GaN at Renesas. “With the industry’s first dual-side-cooled 650V GaN, we cool the device from both sides and cut the footprint significantly, so designers can move more power through the intermediate bus without redrawing the board or adding more cooling hardware. And because it keeps the operational simplicity of the silicon gate drive customers already use, it’s an extremely easy upgrade.”
Reference Designs and Availability
Renesas tested the device in a 6kW, 800V-to-48V LLC DC transformer (DCX) reference design controlled by its RA6T3 MCU. The company reports a power density of 2.6kW per cubic inch. Per-module testing measured full-load efficiency 0.21% higher than an equivalent TOLT-based board.
Renesas is supplying samples to AI data center OEMs and ODMs. Renesas will display new TP65H020G4PLSGBD GaN device at OCP Global Summit, Oct. 12-15 in San Jose, California.
Source: Renesas Electronics
About Renesas Electronics
Renesas Electronics is a semiconductor manufacturer that develops and supplies microcontrollers, analog devices, power semiconductors, system-on-chip products, and connectivity components used in embedded systems. The company provides semiconductor devices and related software for automotive systems, industrial equipment, infrastructure, consumer electronics, and IoT applications. Renesas serves automotive suppliers, electronics manufacturers, device makers, and industrial system developers worldwide. The company designs, manufactures, and markets semiconductor components used in control systems, sensing, power management, and communications. Renesas Electronics was formed in 2010 through the merger of Renesas Technology and NEC Electronics, building on semiconductor businesses of Hitachi and Mitsubishi Electric. The company is headquartered in Tokyo, Japan. Renesas operates design centers, manufacturing facilities, and sales offices across Asia, Europe, and the Americas. Renesas Electronics employs about 23,000 people worldwide.
