Researchers in China have developed a two-dimensional flash memory device capable of storing data using a single electron at room temperature. Called Guiyi, meaning return to one, the device approaches the theoretical minimum of one electron required to transfer a single bit of information. The research was published in the journal Science on July 16, tells Live Science.
The development could address growing demands for faster, denser, and more energy-efficient memory, particularly as artificial intelligence increases pressure on computing infrastructure. Conventional systems rely on large numbers of electrons to represent information. Reducing that requirement to one electron could substantially lower power consumption while increasing storage capacity.
Single-electron memory is not a new idea. Researchers attempted it in the late 1990s, but trapping one electron produced electrical signals too weak for reliable detection. The Guiyi architecture tackles this problem by incorporating a graphene layer ahead of the floating gate, where electrons are trapped and information remains stored even without power.
Because electrons move rapidly through graphene with little resistance, they gain sufficient energy before entering the floating gate. A single trapped electron consequently produces a 0.5-volt signal, approximately 10 times stronger than signals achieved in earlier experiments.
The technology could also help reduce the growing performance gap between processors and memory. Faster movement of data between computing and storage units could decrease delays and improve efficiency in AI workloads.
Commercialization, however, remains a major challenge. Producing the devices reliably, economically, and at semiconductor-industry scale will require considerable development. The research team, led by Fudan University professor Zhou Peng, plans to establish a company and aims to commercialize the technology within three to five years.
If those manufacturing hurdles can be overcome, Guiyi could offer a new approach to flash memory that combines extremely low energy consumption, high storage density, and faster data movement.
