CHANDLER, AZ, Dec 5, 2025 – Everspin Technologies added two devices to its PERSYST MRAM product line, the EM064LX HR and EM128LX HR. The xSPI MRAM parts are designed for extreme environments and provide high-cycle endurance, broad-temperature operation, and long-term data retention for aerospace, defense, automotive, and industrial use.
The new devices meet AEC-Q100 Grade 1 qualification for operation from -40°C to +125°C. Each device undergoes a 48-hour burn-in process and provides 10-year data retention at 125°C. The 64- and 128-megabit parts deliver 90 Mbytes/sec read and write bandwidth with 10-year data retention, making them suitable for systems that require stable, persistent memory performance.
The EM064LX device underwent independent radiation testing at the Berkeley Accelerator Space Effects (BASE) facility at Lawrence Berkeley National Laboratory as part of a NASA Jet Propulsion Laboratory program. The tests reported no single-event latch-up (SEL) events up to a linear energy transfer (LET) of 61 MeV-cm²/mg at ambient temperature. The EM064LX HR and EM128LX HR share the same design architecture, supporting consistent behavior across both devices.
“Our customers design systems that must perform without compromise in the harshest environments,” says Sanjeev Aggarwal, president and CEO of Everspin Technologies. “EM064LX and EM128LX family of products offer the most reliable and durable non-volatile memory where density and total bandwidth are key requirements. These solutions demonstrate Everspin’s ongoing commitment to supporting mission-critical designs that rely on memory performance and reliability under extreme conditions.”
The devices feature a Quad Serial Peripheral Interface (QSPI) that supports 133-megahertz single transfer and 90-megahertz dual transfer operation. This interface provides high bandwidth for data-intensive workloads while maintaining the performance of MRAM. These characteristics allow the EM064LX HR and EM128LX HR to support systems that require secure, persistent memory with both high bandwidth and reliable operation.
Key Benefits of Everspin’s PERSYST EMxxLX High-Reliability MRAM:
- AEC-Q100 grade 1 qualified, -40°C to +125°C operating range
- 10-year data retention at 125°C with unlimited read/write endurance for 10 years
- 48-hour burn-in for added reliability margin
- QSPI interface and packages for design flexibility
- MRAM technology backed by testing and field validation
Source: Everspin Technologies
About Everspin Technologies
Everspin Technologies develops and manufactures magnetoresistive random-access memory (RAM) products, including Toggle MRAM and spin-transfer torque MRAM, and also licenses embedded MRAM technology. Its nonvolatile, high-endurance memory is used in industrial, automotive, aerospace, data-center and IoT applications that require reliable data persistence. Founded in 2008 and headquartered in Chandler, AZ, the company serves a global customer base.