CHANDLER, AZ, Nov 19, 2025 – Everspin has added two new parts to its PERSYST MRAM line, introducing the EM064LX HR and EM128LX HR for systems that operate in extreme conditions. The devices use the xSPI interface and target aerospace, defense, automotive and industrial systems that need durable, nonvolatile storage. They offer high endurance, temperature performance and data retention to protect data during power loss or exposure to harsh environments.
The devices meet the AEC-Q100 Grade 1 standard for operation from -40°C to +125°C. Each device undergoes a 48-hour burn-in process and provides 10-year data retention at 125°C. With 64- and 128-megabit densities achieving 90 Mbytes/sec read and write bandwidth, the EM064LX HR and EM128LX HR are built for systems that do not risk data loss or degradation.
The EM064LX underwent independent radiation testing at the Berkeley Accelerator Space Effects (BASE) facility at Lawrence Berkeley National Laboratory as part of a NASA jet propulsion laboratory program. The tests showed no single-event latch-up (SEL) events up to an LET of 61 MeV-cm²/mg at ambient temperature. The EM064LX HR and EM128LX HR share the same design architecture, supporting consistent performance across both devices.
“Our customers design systems that must perform without compromise in the harshest environments,” says Sanjeev Aggarwal, president and CEO of Everspin Technologies. “EM064LX and EM128LX family of products offers the most reliable and durable non-volatile memory where density and total bandwidth are key requirements. These solutions demonstrate Everspin’s ongoing commitment to supporting mission-critical designs that rely on memory performance and reliability under extreme conditions.”
The new solutions feature a Quad Serial Peripheral Interface (QSPI) supporting 133 MHz single transfer rate and 90 MHz dual transfer rate operation. These capabilities make the EM064LX HR and EM128LX HR products suitable for systems that need secure, persistent memory with defined bandwidth.
Benefits of Everspin’s PERSYST EMxxLX MRAM:
- AEC-Q100 Grade 1 qualified, -40°C to +125°C operating range
- 10-year data retention at 125°C with unlimited read/write endurance for 10 years
- 48-hour burn-in for added reliability margin
- QSPI interface and packages for design flexibility
- MRAM technology backed by testing and field validation
Source: Everspin Technologies
About Everspin Technologies
Everspin Technologies develops and manufactures magnetoresistive random-access memory (RAM) products, including Toggle MRAM and spin-transfer torque MRAM, and also licenses embedded MRAM technology. Its nonvolatile, high-endurance memory is used in industrial, automotive, aerospace, data-center and IoT applications that require reliable data persistence. Founded in 2008 and headquartered in Chandler, AZ, the company serves a global customer base.