CHANDLER, AZ, Mar 11, 2026 – Everspin Technologies has introduced the UNISYST MRAM family, a unified memory for embedded systems. The technology stores code and data in a single MRAM device. This design simplifies memory architecture and storage in embedded platforms.
“System designers are running into the physical and performance limits of NOR flash, especially as process nodes move below 40 nanometers and workloads become more demanding,” said Sanjeev Aggarwal, president and CEO of Everspin Technologies. “With UNISYST, we are extending our MRAM roadmap to higher densities while giving customers a practical way to start with PERSYST today and migrate to a code-and-data MRAM architecture as soon as it is available.”
UNISYST combines code-and-data storage in a MRAM architecture that links configuration memory with higher density persistent storage. The design is used in applications traditionally served by NOR flash that require endurance, reliability, and performance. UNISYST builds on Everspin’s PERSYST MRAM platform and supports migration from current serial MRAM devices.
Everspin will introduce the UNISYST family with memory densities from 128 megabits to 2 gigabits. The devices use a xSPI interface and support octal SPI up to 200 MHz. The devices are designed for AEC-Q100 grade 1 qualification for automotive and other environments. The memory also supports minimum 10 years of data retention at extreme temperatures. UNISYST MRAM devices support embedded platforms used in automotive, aerospace, industrial, and edge AI applications.
“As generative AI models move from the cloud to embedded systems, we’re suddenly dealing with assets that are tens or even hundreds of megabytes in size,” said Kwabena W. Agyeman, president and co-founder of OpenMV. “Storing those models is only part of the challenge – updating them quickly during development and deployment is equally important. High-speed, non-volatile Everspin UNISYST MRAM changes what’s practical for edge AI systems by removing the write bottlenecks associated with traditional flash.”
UNISYST combines high-bandwidth read and write performance with non-volatile MRAM storage. The architecture supports fast boot and software updates compared with flash-based memory designs. UNISYST pairs high-speed memory access with persistent storage for software-defined systems that require frequent reconfiguration across power cycles.
Everspin MRAM has supported storage applications for nearly two decades because of its endurance and reliability. UNISYST extends this MRAM foundation to support software-defined systems:
- Code-and-data MRAM architecture designed as a next-generation alternative to other non-volatile memory
- Standard xSPI interface operating up to octal SPI at 200MHz
- Read bandwidth of up to 400 MB/s and write bandwidth of approximately 90 MB/s, over 400 times faster than NOR flash
- Write endurance up to 10 times higher than typical NOR
- AEC-Q100 Grade 1 qualification and minimum 10-year data retention for high-reliability designs
UNISYST aims applications where non-volatile memory combine with high bandwidth, high endurance, and stable performance across varied temperature and time. Target use cases include:
- AI at the edge: Fast AI weight updates, storage at the edge, local code-and-data storage for workloads requiring fast boot, rapid reconfiguration, and non-volatile operation near the sensor, with the ability to execute in place that reduces the need for multiple memory devices
- Military and aerospace: Field-programmable gate array (FPGA) configuration and code storage for mission-critical systems, including low-Earth orbit satellites and platforms that require over-the-air updates
- Automotive: Control, logging and configuration memory in systems that must meet Grade 1 temperature requirements and data retention
- Industrial and casino gaming: High-volume logging and configuration in environments requiring fast writes, long endurance and persistent storage for data logging
Everspin will introduce the UNISYST product line at Embedded World 2026 as part of an expansion of its MRAM portfolio. The unified architecture combines code storage and data memory in a single design. The approach supports software-defined systems that require fast boot, frequent updates, and predictable behavior over long-term operation. Engineering samples of UNISYST are expected in Q4 2026, with additional densities and options to follow.
At Embedded World 2026, Everspin will present how unified memory architectures affect system design and platform performance. Visitors can meet Everspin (Hall 4, Booth 360) to discuss UNISYST MRAM and existing MRAM products.
Source: Everspin Technologies
About Everspin Technologies
Everspin Technologies is a semiconductor company that develops and manufactures magnetoresistive random-access memory, or MRAM, products for electronic systems. Founded in 2008, the company produces discrete MRAM and spin-transfer torque MRAM memory devices used in computing and embedded applications. Its products store data using magnetic properties and retain information when system power is removed. Everspin also licenses embedded MRAM technology and provides foundry support for semiconductor manufacturing partners. Customers include semiconductor manufacturers, equipment makers and system designers in industrial, automotive, aerospace and data center markets. The company supplies memory products for applications requiring persistent data storage during power interruptions. Everspin Technologies operates engineering and manufacturing activities supporting semiconductor supply chains worldwide. The company is headquartered in Chandler, Arizona, United States. Everspin employs about 100 people globally.