WUXI, China, Sep 2, 2025 – Gallium nitride (GaN) technology is driving a shift in power electronics, moving production toward automation and standardization. At the IPF 2025 Conference, Chairperson of InnoScience Dr. Luo Weiwei highlighted how gallium nitride (GaN) could reshape data centers, EVs, and industrial systems through automation and standardization.
Gallium nitride devices can reduce turn-off losses up to 15x and turn-on losses up to 3x compared with silicon. This supports zero-voltage switching designs with consistent behavior. Placing passive components on printed circuit boards allows automated assembly and predictable EMI performance. GaN systems that use this approach can lower manufacturing cost and improve reliability.
“GaN allows us to move from craftsmanship to science, from manual assembly to automation, and from fragmentation to standardization,” said Dr Luo. “This marks the arrival of the chip era for power electronics.”
InnoScience’s GaN technology is expanding into AI servers, data centers, electric vehicles, and robotics, bringing higher power density, lower energy use, and precision. With 8-inch GaN-on-Si mass production and global partnerships in place, the next phase of compound semiconductors is taking shape.
Source: Innoscience
About Innoscience
Innoscience designs and manufactures energy-efficient GaN (gallium nitride) power devices for a wide range of industries. Founded in 2015, the company creates high-performance solutions that improve power systems. Its GaN technology allows faster switching, better energy efficiency, and less heat, making it useful in consumer electronics, data centers, electric vehicles, telecommunications, and industrial automation. The company’s products help make power systems smaller and environmentally friendly. Headquartered in Suzhou, China, Innoscience has offices and research centers worldwide to support its growing operations. As of 2023, the company generates annual revenue exceeding $300 million, serves over 500 global customers, and employs more than 1,200 people. Its large-scale 8-inch GaN-on-Si manufacturing capability supports its commitment to innovation and meeting modern energy needs.