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STMicro, Innoscience Partner to Advance GaN Power Solutions

by | Apr 2, 2025

GENEVA, Switzerland and SUZHOU, China, Apr 2, 2025 – STMicroelectronics and Innoscience have signed an agreement on GaN technology development and manufacturing, leveraging the strengths of each company to enhance GaN power solutions and supply chain resilience.

The companies have partnered to develop GaN power technology to improve its use in consumer electronics, data centers, automotive and industrial power systems over the next few years. In addition, the agreement allows Innoscience to utilize ST’s front-end manufacturing capacity outside China for its GaN wafers. At the same time, ST can leverage Innoscience’s front-end manufacturing capacity in China for its own GaN wafers. The common ambition is for each company to grow its GaN offerings through supply chain flexibility. This will cater to diverse customer needs across various applications.

Marco Cassis, president, analog, power & discrete, MEMS and sensors of STMicroelectronics said, “ST and Innoscience are both Integrated Device Manufacturers, and with this agreement we will leverage this model to the benefit of our customers globally. First, ST will be accelerating its roadmap in GaN power technology to complement its silicon and silicon carbide offering. Second, ST will be able to leverage a flexible manufacturing model to serve customers globally.”

Dr. Weiwei Luo, chairman and founder of Innoscience, stated “GaN technology is essential to improve electronics, creating smaller and more efficient systems which save electric power, lower cost, and reduce CO2 Emissions. Innoscience pioneered mass production of 8-inch GaN technology and has shipped over 1 billion GaN devices into multiple markets, and we are very excited to move into strategic collaboration with ST. The joint collaboration between ST and Innoscience will further expand and accelerate the adoption of GaN technology. Together the teams at Innoscience and ST will develop the next generations of GaN technology”.

GaN power devices use material properties that improve performance in power conversion, motion control, and actuation. They help reduce energy losses, enhance efficiency, and enable smaller, lighter designs, lowering costs and carbon footprint. These devices are utilized in consumer electronics, industrial and data center power supplies, and solar inverters. They are also being integrated into next-gen EV powertrains due to their substantial size and weight reduction benefits.

Source: STMicroelectronics

About STMicroelectronics

STMicroelectronics, established in 1987 through the merger of Italy’s SGS Microelettronica and France’s Thomson Semiconducteurs, is a global semiconductor company headquartered in Geneva, Switzerland. The company offers a range of products, including analog chips, discrete power semiconductors, microcontrollers, and sensors, serving industries such as automotive, industrial, personal electronics, communications equipment, and computers. In 2023, STMicroelectronics reported revenues of $17.3 billion, with over 50,000 employees worldwide and offices in 40 countries. The company is committed to sustainability, aiming for carbon neutrality in scope 1 and 2 emissions, and partially scope 3, by 2027.

About Innoscience

Innoscience designs and manufactures energy-efficient GaN (gallium nitride) power devices for a wide range of industries. Founded in 2015, the company creates high-performance solutions that improve power systems. Its GaN technology allows faster switching, better energy efficiency, and less heat, making it useful in consumer electronics, data centers, electric vehicles, telecommunications, and industrial automation. The company’s products help make power systems smaller and environmentally friendly. Headquartered in Suzhou, China, Innoscience has offices and research centers worldwide to support its growing operations. As of 2023, the company generates annual revenue exceeding $300 million, serves over 500 global customers, and employs more than 1,200 people. Its large-scale 8-inch GaN-on-Si manufacturing capability supports its commitment to innovation and meeting modern energy needs.